Patent · US Active

Semiconductor device having shielded conductive vias

US8541883B2 · kind B2 · utility

5Cited by
126References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 29, 2011
Grant dateSep 24, 2013
Priority date—
Expiry dateDec 20, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/00014
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention relates to a semiconductor device having a shielding layer. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.