Method for manufacturing magnetic storage device and magnetic storage device
US8546151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2008 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Feb 5, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.