Apparatus and method to inspect defect of semiconductor device
US8546154B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method to inspect a defect of a substrate. Since a recess of an under layer of a substrate is darker than a projection of a top layer, a ratio of a value of a secondary electron signal (of an SEM) of the under layer to a value of the top layer may be increased to improve a pattern image used to inspect an under layer defect. Several conditions under which electron beams are irradiated may be set, and the pattern may be scanned under such conditions. Secondary electron signals may be generated according to the conditions and converted into image data to display various pattern images. Scan information on the images may be stored with positional information on the substrate. Each of scan information on the pattern images may be calculated to generate a new integrated image.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.