Method of improving oxide growth rate of selective oxidation processes
US8546271B2 · kind B2 · utility
3Cited by
30References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Sep 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.