Patent · US Active

Optical system for EUV lithography with a charged-particle source

US8546776B2 · kind B2 · utility

1Cited by

3References

11Claims

0Family size

Assignee

Carl Zeiss SMT GmbH · DE

Inventors

Dirk Heinrich Ehm · Beckingen, DE
Markus Weiss · Aalen, DE
Christoph Zaczek · Heubach, DE
Tobias Hackl · Langenau, DE
Wolfgang Seitz · Leingarten, DE

Key dates

Filing date	Dec 13, 2012
Grant date	Oct 1, 2013
Priority date	—
Expiry date	Dec 13, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/70916
WIPO fieldOptics
WIPO sectorInstruments

Abstract

To prevent reflective optical elements (2) for EUV lithography from becoming electrically charged as they are irradiated with EUV radiation (4), an optical system for EUV lithography is proposed, having a reflective optical element (2), including a substrate (21) with a highly reflective coating (22) emitting secondary electrons when irradiated with EUV radiation (4), and a source (3) of electrically charged particles, which is arranged in such a manner that electrically charged particles are applied to the reflective optical element (2), wherein the source (3) for the charge carrier compensation is exclusively a flood gun applying electrons to the reflective optical element (2).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.