Mark structure and method for measuring alignment accuracy between former layer and latter layer
US8546962B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Mar 8, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mark structure for measuring the alignment accuracy between a former layer and a latter layer with electron beam inspection (EBI) is described. The mark structure includes multiple divisions, each of which includes at least one region that includes multiple parts each disposed with a pair of a pattern of the former layer and a pattern of the latter layer. In each region, all of the parts have the same distance in a direction between the pattern of the former layer and the pattern of the latter layer. The distance in the direction is varied over the regions of the divisions of the mark structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.