Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
US8547736B2 · kind B2 · utility
14Cited by
11References
25Claims
0Family size
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Key dates
| Filing date | Aug 3, 2010 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Oct 2, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/027
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.