Method for forming metal gate
US8551847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Sep 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a metal gate is provided. First, a dummy material is formed to completely cover a substrate. Second, a dopant is selectively implanted into the dummy material. Then, some of the dummy material is removed to expose part of the substrate and to form a dummy gate including a dopant region disposed between a first region and a second region. Later an interlayer dielectric layer is formed to surround the dummy gate. Next, a selective etching step is carried out to remove the first region to form a recess without substantially removing the dopant region. Afterwards, the recess is filled with a material set to form a metal gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.