Manufacturing method for semiconductor device having metal gate
US8551876B2 · kind B2 · utility
5Cited by
19References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Aug 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.