Strained silicon structure

US8552503B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Guang-Yaw Hwang · Danei, TW
• Ling-Chun Chou · Douliu, TW
• I-Chang Wang · Tainan, TW
• Shin-Chuan Huang · Tainan, TW
• Jiunn-Hsiung Liao · Tainan, TW
• Shin-Chi Chen · Huxi Town, TW
• Pau-Chung Lin · Daxi District, TW
• Chiu-Hsien Yeh · Tainan, TW
• Chin-Cheng Chien · Tainan, TW
• Chieh-Te Chen

Key dates

• Filing date: Nov 30, 2010
• Grant date: Oct 8, 2013
• Expiry date: Jun 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A strained silicon substrate structure includes a first transistor and a second transistor disposed on a substrate. The first transistor includes a first gate structure and two first source/drain regions disposed at two sides of the first gate structure. A first source/drain to gate distance is between each first source/drain region and the first gate structure. The second transistor includes a second gate structure and two source/drain doped regions disposed at two side of the second gate structure. A second source/drain to gate distance is between each second source/drain region and the second gate structure. The first source/drain to gate distance is smaller than the second source/drain to gate distance.