Conductive pad on protruding through electrode semiconductor device
US8552548B1 · kind B1 · utility
19Cited by
371References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2011 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Dec 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01079
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To form a semiconductor device, a through electrode is formed in a semiconductor die, and a dielectric layer is then formed to cover the through electrode. The dielectric layer has an opening by being partially etched to allow the through electrode to protrude to the outside, or has a thickness thinner overall so as to allow the through electrode to protrude to the outside. Subsequently, a conductive pad is formed on the through electrode protruding to the outside through the dielectric layer by using an electroless plating method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.