Patent · US Active

Embedded electronic component

US8556159B2 · kind B2 · utility

0Cited by

11References

20Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Tu-Anh N. Tran · Austin, US
Burton J. Carpenter · Austin, US

Key dates

Filing date	Feb 24, 2012
Grant date	Oct 15, 2013
Priority date	—
Expiry date	Feb 24, 2032

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/4913
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Forming an embedded electronic component includes attaching an electronic component to a first conductive layer and forming a layer stack with a first partially cured dielectric layer having a first opening and a substrate having a second opening. The partially cured dielectric layer is located over the first conductive layer and the substrate is located over the first partially cured dielectric layer such that the first and second openings surround the electronic component. Heat and pressure are applied to the layer stack such that the first partially cured dielectric layer flows for filling gaps within the first and second openings and becomes fully cured.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.