Patent · US Active

Method for controlling structure height

US8557649B2 · kind B2 · utility

3Cited by

9References

5Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Rajasekhar Venigalla · Hopewell Junction, US
Michael V. Aquilino · Wappingers Falls, US
Massud Aminpur · Crolles, FR
Michael P. Belyansky · Hopewell Junction, US
Unoh Kwon · Fishkill, US
Christopher D. Sheraw · Wappingers Falls, US
Daewon Yang · Hopewell Junction, US

Key dates

Filing date	Oct 21, 2011
Grant date	Oct 15, 2013
Priority date	—
Expiry date	Nov 11, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76283
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for controlling the height of semiconductor structures are disclosed. Amorphous carbon is used as a stopping layer for controlling height variability. In one embodiment, the height of replacement metal gates for transistors is controlled. In another embodiment, the step height of a shallow trench isolation region is controlled.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.