Method for forming N-shaped bottom stress liner

US8557668B2 · kind B2 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Xiaodong Yang · New York, US
• Yanxiang Liu · San Diego, US
• Vara Govindeswara Reddy Vakada · Beacon, US
• Jinping Liu · Ballston Lake, US
• Min Dai · Hsinchu, TW

Key dates

• Filing date: Jan 12, 2012
• Grant date: Oct 15, 2013
• Expiry date: Apr 4, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021

Abstract

Semiconductor devices with n-shaped bottom stress liners are formed. Embodiments include forming a protuberance on a substrate, conformally forming a sacrificial material layer over the protuberance, forming a gate stack above the sacrificial material layer on a silicon layer, removing the sacrificial material layer to form a tunnel, and forming a stress liner in the tunnel conforming to the shape of the protuberance. Embodiments further include forming a silicon layer over the sacrificial material layer and lining the tunnel with a passivation layer prior to forming the stress liner.