Multi-layer mask for substrate dicing by laser and plasma etch
US8557682B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2011 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68327
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.