Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8558220B2 · kind B2 · utility
16Cited by
15References
51Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 31, 2007 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Oct 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In some aspects, a method of fabricating a memory cell is provided that includes (1) fabricating a first conductor above a substrate; (2) selectively fabricating a carbon nano-tube (CNT) material above the first conductor; (3) fabricating a diode above the CNT material; and (4) fabricating a second conductor above the diode. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.