Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
US8559215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2012 |
| Grant date | Oct 15, 2013 |
| Priority date | — |
| Expiry date | Feb 11, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic random access memory (MRAM) element is configured to store a state when electric current flows and includes a first magnetic tunnel junction (MTJ) for storing a data bit and a second MTJ for storing a reference bit. The direction of magnetization of the FL is determinative of the data bit stored in the at least one MTJ. Further, the MTJ includes a magnetic reference layer (RL) having a magnetization with a direction that is perpendicular to the film plane, and a magnetic pinned layer (PL) having a magnetization with a direction that is perpendicular to the film plane. The direction of magnetization of the RL and the PL are anti-parallel relative to each other in the first MTJ. The direction of magnetization of the FL, the RL and the PL are parallel relative to each other in the second MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.