Patent · US Active

Thermal sensor for semiconductor circuits

US8562210B2 · kind B2 · utility

4Cited by
23References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 19, 2010
Grant dateOct 22, 2013
Priority date
Expiry dateNov 12, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01K7/16
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.