Thermal sensor for semiconductor circuits
US8562210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2010 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Nov 12, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/16
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.