John A. Fifield
178Patents
25h-index
142Co-inventors
93Inventor score
Filing activity: Sep 14, 1981 → Sep 29, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5010524A | Crosstalk-shielded-bit-line dram | Physics | 115 | Expired |
| US5134616A | Dynamic RAM with on-chip ECC and optimized bit and word redundancy | Physics | 108 | Expired |
| US6141245A | Impedance control using fuses | Electricity | 86 | Expired |
| US6118318A | Self biased differential amplifier with hysteresis | Electricity | 82 | Expired |
| US5873053A | On-chip thermometry for control of chip operating temperature | Emerging Cross-Sectional Technologies | 68 | Expired |
| US6577156B2 | Method and apparatus for initializing an integrated circuit using compressed data from a remote fusebox | Physics | 64 | Expired |
| US6346846B1 | Methods and apparatus for blowing and sensing antifuses | Physics | 60 | Expired |
| US5761114A | Multi-level storage gain cell with stepline | Physics | 59 | Expired |
| US6420925B1 | Programmable latch device with integrated programmable element | Physics | 59 | Expired |
| US5909400A | Three device BICMOS gain cell | Physics | 56 | Expired |
| US6373771B1 | Integrated fuse latch and shift register for efficient programming and fuse readout | Physics | 53 | Expired |
| US5058115A | Fault tolerant computer memory systems and components employing dual level error correction and detection with lock-up feature | Physics | 51 | Expired |
| US6753590B2 | High impedance antifuse | Emerging Cross-Sectional Technologies | 45 | Expired |
| US6444490B1 | Micro-flex technology in semiconductor packages | Electricity | 42 | Expired |
| US5307356A | Interlocked on-chip ECC system | Physics | 41 | Expired |
| US5228046A | Fault tolerant computer memory systems and components employing dual level error correction and detection with disablement feature | Physics | 39 | Expired |
| US5682394A | Fault tolerant computer memory systems and components employing dual level error correction and detection with disablement feature | Physics | 37 | Expired |
| US6400202B1 | Programmable delay element and synchronous DRAM using the same | Electricity | 36 | Expired |
| US6177807A | High frequency valid data strobe | Electricity | 35 | Expired |
| US5535226A | On-chip ECC status | Physics | 33 | Expired |
| US6384666B1 | Antifuse latch device with controlled current programming and variable trip point | Physics | 30 | Expired |
| US6272054A | Twin-cell memory architecture with shielded bitlines for embedded memory applications | Physics | 27 | Expired |
| US9000837B1 | Adjustable reference voltage generator for single-ended DRAM sensing devices | Physics | 27 | Active |
| US6621324B2 | Redundant antifuse segments for improved programming efficiency | Electricity | 26 | Expired |
| US5031151A | Wordline drive inhibit circuit implementing worldline redundancy without an access time penalty | Physics | 26 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.