Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron
US8562798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2005 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | May 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76844
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A physical vapor deposition reactor includes a metal sputter target, a D.C. sputter power source coupled to the metal sputter target and a wafer support pedestal facing the metal sputter target. A movable magnet array is adjacent a side of the metal sputter target opposite the wafer support pedestal. A solid metal RF feed rod engages the metal sputter target and extends from a surface of the target on a side opposite the wafer support pedestal. A VHF impedance match circuit is coupled to an end of the RF feed rod opposite the metal sputter target and a VHF RF power generator coupled to said VHF impedance match circuit. Preferably, the reactor of further includes a center axle about which the movable magnet array is rotatable, the center axle having an axially extending hollow passageway, the RF feed rod extending through the passageway.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.