Silicon nitride passivation layer for covering high aspect ratio features

US8563095B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Nagarajan Rajagopalan · Santa Clara, US
• Xinhai Han · Santa Clara, US
• Ryan Yamase · Santa Clara, US
• Ji Ae Park · Seoul, KR
• Shamik Patel · Redlands, US
• Thomas Nowak · Cupertino, US
• Zhengjiang “David” Cui · San Jose, US
• Mehul Naik · San Jose, US
• Heung Lak Park · San Jose, US
• Ran Ding · Bolton, US
• Bok Hoen Kim · San Jose, US

Key dates

• Filing date: Mar 15, 2010
• Grant date: Oct 22, 2013
• Expiry date: Jan 28, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/351
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.