Methods for forming conductive carbon films by PECVD
US8563414B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2010 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/505
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Conductive carbon films having a resistivity of less than about 0.2 Ohm-cm, preferably less than about 0.05 Ohm-cm, are deposited by PECVD. Conductive carbon films are essentially free of sp3-hybridized carbon and contain predominantly sp2 carbon, based on IR spectral features. Carbon content of the films is at least about 75% atomic C. Conductive carbon films may contain hydrogen, but are typically hydrogen-poor, containing less than about 20% H. In some embodiments, conductive carbon films further contain nitrogen (N). For example, conductive films having a CxHyNz composition, where nitrogen is present at between about 5-10% atomic, have both high conductivity and low roughness, because introduction of nitrogen delays formation of crystallites in the film. The films are deposited at a process temperature of at least about 620° C., and at a pressure of less than about 20 Torr in a dual-frequency plasma process dominated by low frequency (LF) plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.