Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8564024B2 · kind B2 · utility
6Cited by
191References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2009 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Sep 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.