Magnetic storage element utilizing improved pinned layer stack
US8564080B2 · kind B2 · utility
6Cited by
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35Claims
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Key dates
| Filing date | Jul 16, 2010 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Mar 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A magnetic tunnel junction (MTJ) storage element may comprise a pinned layer stack and a first functional layer. The pinned layer stack is formed of a plurality of layers comprising a bottom pinned layer, a coupling layer, and a top pinned layer. The first functional layer is disposed in the bottom pinned layer or the top pinned layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.