Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same
US8564095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2011 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | Feb 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.