Power device with bottom source electrode
US8564110B2 · kind B2 · utility
6Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2012 |
| Grant date | Oct 22, 2013 |
| Priority date | — |
| Expiry date | May 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor package has an ultra thin chip with front side molding to reduce substrate resistance; a lead frame unit with grooves located on both side leads provides precise positioning for connecting numerous bridge-shaped metal clips to the front side of the side leads. The bridge-shaped metal clips are provided with bridge structure and half or fully etched through holes for relieving superfluous solder during manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.