Method for growing single crystal of group III metal nitride and reaction vessel for use in same
US8568532B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 9, 2011 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Dec 9, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.