Method for manufacturing silicon carbide semiconductor device
US8569106B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2010 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Feb 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A film of an epitaxial layer that allows the reduction in both the height of a bunching step and crystal defects caused by a failure in migration of reactive species on a terrace is formed on a SiC semiconductor substrate having an off angle of 5 degrees or less. A film of a first-layer epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate having an off angle of 5 degrees or less. Subsequently, the temperature in a reactor is lowered. A second-layer epitaxial layer is caused to epitaxially grow on and in contact with a surface of the first-layer epitaxial layer. In the above-described manner, the epitaxial layer is structured with two layers, and the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.