Semiconductor device and method for fabricating the same
US8569127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2012 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is described. A substrate having thereon a polysilicon resistor is provided. A dielectric layer is formed over the substrate covering the polysilicon resistor. The dielectric layer is etched to form a contact opening over the polysilicon resistor, with overetching into the polysilicon resistor. A metal silicide layer is formed on the polysilicon resistor in the contact opening. A metal material is filled in the contact opening. A portion of the dielectric layer, the metal material, and a portion of the polysilicon resistor are removed to expose the metal silicide layer. A metal contact is formed over the metal silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.