Forming air gaps in memory arrays and memory arrays with air gaps thus formed
US8569130B2 · kind B2 · utility
1Cited by
9References
28Claims
0Family size
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Key dates
| Filing date | Jul 28, 2011 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | Dec 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming air gaps in memory arrays and memory arrays with air gaps thus formed are disclosed. One such method may include forming an isolation region, having a first dielectric, through a charge-storage structure that is over a semiconductor, the isolation region extending into the semiconductor; forming a second dielectric over the isolation region and charge-storage structure; and forming an air gap in the isolation region so that the air gap passes through the charge-storage structure and so that a thickness of the first dielectric is between the air gap and the second dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.