Patent · US Active

Method and system for carbon doping control in gallium nitride based devices

US8569153B2 · kind B2 · utility

5Cited by

0References

21Claims

0Family size

Assignee

Avogy, Inc. · US

Inventors

David P. Bour · Cupertino, US
Thomas R. Prunty · Santa Clara, US
Linda Romano · Sunnyvale, US
Richard J. Brown · Los Gatos, US
Isik C. Kizilyalli · San Francisco, US
Hui Nie · Cupertino, US

Key dates

Filing date	Nov 30, 2011
Grant date	Oct 29, 2013
Priority date	—
Expiry date	Apr 30, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/854
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.