Method for forming ultra-shallow doping regions by solid phase diffusion
US8569158B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Oct 29, 2013 |
| Priority date | — |
| Expiry date | May 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an ultra-shallow dopant region in a substrate is provided. In one embodiment, the method includes depositing a dopant layer in direct contact with the substrate, the dopant layer containing an oxide, a nitride, or an oxynitride, where the dopant layer contains a dopant selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi). The method further includes patterning the dopant layer; and forming the ultra-shallow dopant region in the substrate by diffusing the dopant from the patterned dopant layer into the substrate by a thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.