Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot
US8574362B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Oct 2, 2008 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Oct 10, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.