Epitaxial methods and templates grown by the methods
US8574968B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 25, 2008 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | Jul 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.