Methods of forming a pattern on a substrate
US8575032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2011 |
| Grant date | Nov 5, 2013 |
| Priority date | — |
| Expiry date | May 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0338
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern on a substrate includes forming a repeating pattern of four first lines elevationally over an underlying substrate. A repeating pattern of four second lines is formed elevationally over and crossing the repeating pattern of four first lines. First alternating of the four second lines are removed from being received over the first lines. After the first alternating of the four second lines have been removed, elevationally exposed portions of alternating of the four first lines are removed to the underlying substrate using a remaining second alternating of the four second lines as a mask. Additional embodiments are disclosed and contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.