Patent · US Active

Method for molecular bonding of silicon and glass substrates

US8580654B2 · kind B2 · utility

5Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 29, 2011
Grant dateNov 12, 2013
Priority date
Expiry dateMar 23, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76251
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention concerns a method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.