Method for forming ultra-shallow boron doping regions by solid phase diffusion
US8580664B2 · kind B2 · utility
38Cited by
19References
20Claims
0Family size
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Key dates
| Filing date | Mar 31, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Sep 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxynitride formed by alternating gaseous exposures of boron amide precursor or an organoboron precursor and a reactant gas. The method further includes patterning the dopant layer and forming an ultra-shallow dopant region in the substrate by diffusing boron from the boron dopant layer into the substrate by a thermal treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.