Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization

US8581310B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Jing Wan · Malta, US
• Sorin Cristoloveanu · Seyssinet-Pariset, FR
• Cyrille Le Royer · Grenoble, FR
• Alexander Zaslavsky · Netanya, IL

Key dates

• Filing date: Sep 12, 2012
• Grant date: Nov 12, 2013
• Expiry date: Sep 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

The transistor comprises first and second source/drain electrodes formed in a semiconductor film by N-doped and P-doped areas, respectively. A polarization voltage is applied between the two source/drain electrodes in order to impose to the P-doped electrode a potential higher than that of the N-doped electrode. The transistor comprises first and second devices for generating a potential barrier in the semiconductor film. The two potential barriers are opposed to the passage of the charge carriers emitted by the first and second source/drain electrodes, respectively. The two potential barriers are shifted with respect to an axis connecting the two source/drain electrodes. The two devices for generating a potential barrier are configured to generate a potential barrier having a variable amplitude and it are electrically connected to the gate and to the counter electrode.