Jing Wan
33Patents
8h-index
69Co-inventors
74Inventor score
Filing activity: Oct 15, 2004 → Apr 26, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7215737B2 | Double-radiant-source framework for container detecting system | Physics | 42 | Expired |
| US9431512B2 | Methods of forming nanowire devices with spacers and the resulting devices | Electricity | 27 | Active |
| US10977490B1 | Technologies for using image data analysis to assess and classify hail damage | Physics | 15 | Active |
| US10248533B1 | Detection of anomalous computer behavior | Electricity | 14 | Active |
| US9085957B2 | Discretized physics-based models and simulations of subterranean regions, and methods for creating and using the same | Physics | 12 | Active |
| US9306019B2 | Integrated circuits with nanowires and methods of manufacturing the same | Electricity | 11 | Active |
| US9043189B2 | Space-time surrogate models of subterranean regions | Physics | 10 | Active |
| US9390979B2 | Opposite polarity borderless replacement metal contact scheme | Electricity | 9 | Active |
| US7983883B2 | Enriched multi-point flux approximation | Physics | 8 | Active |
| US9129987B2 | Replacement low-K spacer | Electricity | 8 | Active |
| US8190414B2 | Modeling of hydrocarbon reservoirs containing subsurface features | Physics | 8 | Active |
| US11080838B1 | Systems and methods for image labeling using artificial intelligence | Physics | 7 | Active |
| US9490340B2 | Methods of forming nanowire devices with doped extension regions and the resulting devices | Electricity | 7 | Active |
| US9608086B2 | Metal gate structure and method of formation | Electricity | 6 | Active |
| US9640625B2 | Self-aligned gate contact formation | Electricity | 6 | Active |
| US10652257B1 | Detection of anomalous computer behavior | Electricity | 6 | Active |
| US8581310B2 | Z2FET field-effect transistor with a vertical subthreshold slope and with no impact ionization | Electricity | 3 | Active |
| US11384552B2 | Massage system for inflatable pool | Human Necessities | 3 | Active |
| US9263520B2 | Facilitating fabricating gate-all-around nanowire field-effect transistors | Electricity | 3 | Active |
| US10824535B1 | Detection of anomalous computer behavior | Electricity | 2 | Active |
| US9147696B2 | Devices and methods of forming finFETs with self aligned fin formation | Electricity | 2 | Active |
| US8634229B2 | Dynamic memory cell provided with a field-effect transistor having zero swing | Electricity | 2 | Active |
| US10082000B2 | Apparatus and method for isolating fluid flow in an open hole completion | Physics | 1 | Active |
| US9276102B2 | Tunnel transistor with high current by bipolar amplification | Electricity | 1 | Active |
| US11310253B1 | Detection of anomalous computer behavior | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.