Nonvolatile memory device and method for making the same
US8581322B2 · kind B2 · utility
3Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Jun 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method for making a nonvolatile memory device includes the following steps. A conductive structure is formed, wherein the conductive structure has a first top portion. The first top portion is converted into a second top portion having a domed surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.