Power MOSFET with embedded recessed field plate and methods of fabrication
US8581341B2 · kind B2 · utility
5Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2011 |
| Grant date | Nov 12, 2013 |
| Priority date | — |
| Expiry date | Nov 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor power devices, and related methods, wherein a recessed contact makes lateral ohmic contact to the source diffusion, but is insulated from the underlying recessed field plate (RFP). Such an insulated RFP is here referred to as an embedded recessed field plate (ERFP).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.