Patent · US Active

Planarization of a material system in a semiconductor device by using a non-selective in situ prepared slurry

US8585465B2 · kind B2 · utility

1Cited by

21References

13Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Johannes Groschopf · Radebeul, DE
Rico Hueselitz · Calau, DE
Marco Kitsche · Dresden, DE
Katja Steffen · Dresden, DE

Key dates

Filing date	Dec 16, 2010
Grant date	Nov 19, 2013
Priority date	—
Expiry date	Feb 10, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/017
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.