Patent · US Active

Multi-step deposition control

US8585877B2 · kind B2 · utility

1Cited by

1References

18Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Roland Jaeger · Mulhouse, FR
Frank Wagenbreth · Dresden, DE
Frank Koschinsky · Radebeul, DE

Key dates

Filing date	Mar 9, 2012
Grant date	Nov 19, 2013
Priority date	—
Expiry date	Mar 9, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.