Use of CL2 and/or HCL during silicon epitaxial film formation
US8586456B2 · kind B2 · utility
1Cited by
88References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jul 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.