Patent · US Active

Conductive lines and pads and method of manufacturing thereof

US8586472B2 · kind B2 · utility

0Cited by

10References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Hampp · Bad Abbach, DE
Thomas Fischer · Umkirch, DE
Uwe Hoeckele · Regensburg, DE

Key dates

Filing date	Jul 14, 2010
Grant date	Nov 19, 2013
Priority date	—
Expiry date	Jan 7, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method are disclosed. The semiconductor device includes a substrate having a first region and a second region and an insulating layer arranged on the substrate. A first conductive layer is arranged in or on insulating layer in the first region and a second conductive layer is arranged in or on the insulating layer in the second region. The first conductive layer comprises a first conductive material and the second conductive layer comprises a second conductive material wherein the first conductive material is different than the second conductive material. A metal layer is arranged on the first conductive layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.