Methods for forming a contact metal layer in semiconductor devices
US8586479B2 · kind B2 · utility
2Cited by
46References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jul 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.