Chemical planarization of copper wafer polishing

US8586481B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• You Wang · Cupertino, US
• Wen-Chiang Tu · Mountain View, US
• Feng Q. Liu · San Jose, US
• Yuchun Wang · Dhahran, SA
• Lakshmanan Karuppiah · San Jose, US
• William H. McClintock · Los Altos, US
• Barry Chin · Sunnyvale, US

Key dates

• Filing date: May 11, 2011
• Grant date: Nov 19, 2013
• Expiry date: Jul 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/7684
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.