Method for forming semiconductor device
US8586486B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2011 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jan 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of patterning a material layer of a semiconductor device is disclosed, the method including treating a material layer above a semiconductor substrate with plasma oxygen; depositing a layer of photoresist over a first surface of the material layer after the treating of the material layer; patterning the layer of photoresist, thereby forming a patterned photoresist, exposing portions of the material layer; etching the exposed portions of at least the material layer to form at least one contact via in the material layer extending to a source or drain region of a device at a surface of the substrate; and removing the patterned photoresist from the first surface of the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.