Low temperature plasma enhanced chemical vapor deposition of conformal silicon carbon nitride and silicon nitride films
US8586487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.