Switching element and manufacturing method thereof
US8586958B2 · kind B2 · utility
7Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2010 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jan 8, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/55
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching element includes: a first electrode supplying metal ions; a second electrode less ionizable than the first electrode; and an ion conducting layer arranged between the first electrode and the second electrode and containing a metal oxide that can conduct the metal ions. The ion conducting layer includes two or more layers of different types, and one of the ion conducting layers that is closest to the first electrode has a larger diffusion coefficient for the metal ions than that of the other ion conducting layer(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.